j. c/ u , l/ ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn rf transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BFG193 description ? low noise figure nf = 1.3 db typ. @vce = 8 v, lc = 10 ma, f = 900 mhz ? high gain i s2ie i 2= 13.5 db typ. @vce= 8 v,lc = 30 ma,f = 900 mhz applications ? designed for use in low noise .high-gain amplifiers and linear broadband amplifiers. absolute maximum ratings(ta=25'c) symbol vcbo vces vceo vebo lc ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @tc=25'c junction temperature storage temperature range value 20 20 12 2 80 10 0.6 150 -65-150 unit v v v v ma ma w c ?c sot- 2 3 package t; fy^' h | i? a iii t t i marking a c 1 1 u' u _l 1 i*d*i h? e? 1 \i j=j ;-j l 1 : base - : emitter 3 ; collector 11 _l i ? 1 1 ? 1 i. ? ? ' 1 ' ? ml dim a b v d r_ h k l \ mm min 0,57 1. 19 2. id 0. s3 1. 7s :, 65 1. 10 0, ic 0. 076 max 0. 31 l. ;0 :. 50 1.05 2.05 3. 05 1, 30 o. ei 0. 17s u 4 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor BFG193 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo ices icbo iebo hfe fi cob pg pg i s2le i 2 i s21e 1 2 nf nf parameter collector-emitter breakdown voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current-gain? bandwidth product output capacitance power gain power gain insertion power gain insertion power gain noise figure noise figure conditions lo= 1ma; ib= 0 vce= 20v; vbe= 0 vcb=10v; ie=0 veb= 1v; lc= 0 lc= 30ma ; vce= 8v lc= 50ma ; vce= 8v; f= 500mhz le=0;vcb=10v;f=1mhz lc= 30ma ; vce= 8v; f= 900mhz lc= 30ma ; vce= 8v; f= 1 ,8ghz lc= 30ma ; vge= 8v; f= 900mhz lc= 30ma ; vce= 8v; f= 1 ,8ghz lc= 10ma ; vce= 8v; f= 900mhz lc= 1 0ma ; vce= 8v; f= 1 .8ghz min 12 50 6 typ. 8 0.6 15.5 10 13.5 8 1.3 2.1 max 100 0.1 1 200 0.9 unit v na ua ua ghz pf db db db db db db
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